chp1102 - 98f rohs comp liant ref. : dschp11022305 - 31 oct 12 1 / 10 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 s - band 6 - bit phase shifter gaas monolithic microwave ic description the chp1102 - 98f is 6 - bit phase shifter with an amplifier at its input and output. the circuit is driven by a ttl compatible parallel interface. it is designed for radar systems. the circuit is manufactured with a power phemt process, 0.25m gate length, via holes through the substrate and air bridges. it is available in chip form. main feat ures peak phase error vs state @ 2.7, 3, 3.4ghz (on wafer measurements) operating frequency range: 2.7 6 5.625 phase step 10db gain 0/+3.3v phase shifter control voltage 13dbm output @ 1db comp. chip size: 3.14 main characteristics tamb= +25c, v+= +5v, v - = - 5v symbol parameter min typ max unit freq frequency range 2.7 3.4 ghz gain small signal gain (state 0) 9 10 db rms_ppe rms peak phase error 1 deg esd protections: electr ostatic discharge sensitive device observe handling precautions! amp1 phase shifter in out amp2 v - a1 a6 v+ state peak phase error ( deg ) 2.7ghz 3ghz 3.4ghz
chp1102 - 98f s - band 6 - bit phase shifter ref. : dschp11022305 - 31 oct 12 2 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 main characteristics tamb.= +25c symbol parameter min typ max unit fop operating frequency range 2.7 3.4 ghz g small signal gain (state 0) 9 10 gvt small signal gain variation versus temperature 0.03 db/c nf noise figure (state 0) 5.8 db s11 input reflection coefficient - 15 db s22 output reflection coefficient - 15 db ppea peak phase error for states 1 to 2 +/ - 1.5 ppeb peak phase error for states 3 to 14 +/ - 3 pped peak phase error for states 15 to 63 +/ - 5 rms_ppe rms peak phase error 1 ava amplitude variation for states 1 to 4 +/ - 0.3 db avb amplitude variation for states 5 to 63 +/ - 0.7 db rms_av rm s amplitude variation 0.3 db stddev_av amplitude variation standard deviation 0.12 db p - 1db output power at 1db gain compression 13 dbm v+ dc positive supply +5 v v - dc negative supply - 5 v vctrl_l phase shift er control voltage (low state) - 0 0.4 v vctrl_h phase shifter control voltage (high state) 2.4 3.3 7 v i_v+ courant i+ (state 0 and low level) 100 ma i_v - courant i - (state 0 and low level) 23 ma these values are representativ e of on wafer measurements.
s - band 6 - bit phase shifter chp1102 - 98f ref. : dschp11022305 - 31 oct 12 3 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 peak phase error (ppe) definition ppe(i) = measured_phase(s21)@state(i) - measured_phase(s21)@state(0) - theoreticalphasevalue@state(i) amplitude variation (av) definition av(i) = measured_db(s21)@state(i) - measured_db(s2 1)@state(0) rms peak phase error (rms_ppe) definition rms_ppe = where rms amplitude variation (rms_av) definition amplitude variation standart deviation (stddev_av) definition stddev_av = (db) the translation of av(i) from db to linear is given by: av(i)_lin = (i) is in the range [0:63] absolute maximum ratings (1) tamb.= +25c symbol parameter values unit v+ maximum dc pos itive supply +6 v v - maximum dc negative supply - 6 v vctrl phase shifter control voltage (vlow vhigh) - 0.5 +5.5 v pin maximum peak input power overdrive +11 dbm top operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +1 50 c (1) operation of this device above anyone of these parameters may cause permanent damage. 64 ) ( 63 0 ? ? ? i i ppe ppe 64 ) ( _ 63 0 ? ? ? ? i i av av av rms ? ? ? ? ? ? ? ? ? ? ? ? 63 0 2 ) _ ) ( 1 ( . 64 1 1 log 20 i lin i av 20 ) ( 10 i av 64 ) ) ( ( 63 0 2 ? ? ? i ppe i ppe
chp1102 - 98f s - band 6 - bit phase shifter ref. : dschp11022305 - 31 oct 12 4 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 phase shifter control interface the phase shifter is controlled by 6 bits (a1 to a6). reference state is 0. state is 0 when 0v is applied, state is 1 state a1 a2 a3 a4 a5 a6 phase (deg) 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 5,625 2 0 1 0 0 0 0 11,25 3 1 1 0 0 0 0 16,875 4 0 0 1 0 0 0 22,5 5 1 0 1 0 0 0 28,125 6 0 1 1 0 0 0 33,75 7 1 1 1 0 0 0 39,375 8 0 0 0 1 0 0 45 9 1 0 0 1 0 0 50,625 10 0 1 0 1 0 0 56,25 11 1 1 0 1 0 0 61,875 12 0 0 1 1 0 0 67,5 13 1 0 1 1 0 0 73,125 14 0 1 1 1 0 0 78,75 15 1 1 1 1 0 0 84,375 16 0 0 0 0 1 0 90 17 1 0 0 0 1 0 95,625 18 0 1 0 0 1 0 101,25 19 1 1 0 0 1 0 106,875 20 0 0 1 0 1 0 112,5 21 1 0 1 0 1 0 118,125 22 0 1 1 0 1 0 123,75 23 1 1 1 0 1 0 129,375 24 0 0 0 1 1 0 135 25 1 0 0 1 1 0 140,625 26 0 1 0 1 1 0 146,25 27 1 1 0 1 1 0 151,875 28 0 0 1 1 1 0 157,5 29 1 0 1 1 1 0 163,125 30 0 1 1 1 1 0 168,75 31 1 1 1 1 1 0 174,375 32 0 0 0 0 0 1 180 33 1 0 0 0 0 1 185,625 34 0 1 0 0 0 1 191,25 35 1 1 0 0 0 1 196,875 36 0 0 1 0 0 1 202,5 37 1 0 1 0 0 1 208,125 38 0 1 1 0 0 1 213,75 39 1 1 1 0 0 1 219,375 40 0 0 0 1 0 1 225 41 1 0 0 1 0 1 230,625 42 0 1 0 1 0 1 236,25 43 1 1 0 1 0 1 241,875 44 0 0 1 1 0 1 247,5 45 1 0 1 1 0 1 253,125 46 0 1 1 1 0 1 258,75 47 1 1 1 1 0 1 264,375 48 0 0 0 0 1 1 270 49 1 0 0 0 1 1 275,625 50 0 1 0 0 1 1 281,25 51 1 1 0 0 1 1 286,875 52 0 0 1 0 1 1 292,5 53 1 0 1 0 1 1 298,125 54 0 1 1 0 1 1 303,75 55 1 1 1 0 1 1 309,375 56 0 0 0 1 1 1 315 57 1 0 0 1 1 1 320,625 58 0 1 0 1 1 1 326,25 59 1 1 0 1 1 1 331,875 60 0 0 1 1 1 1 337,5 61 1 0 1 1 1 1 343,125 62 0 1 1 1 1 1 348,75 63 1 1 1 1 1 1 354,375
s - band 6 - bit phase shifter chp1102 - 98f ref. : dschp11022305 - 31 oct 12 5 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical s - parameter results (on wafer measurements) tamb.= +25c, v+ = +5v, v - = - 5v. [s] parameters gain versus frequency all phase states input return loss versus. frequency all phase states output return los s versus. frequency all phase states
chp1102 - 98f s - band 6 - bit phase shifter ref. : dschp11022305 - 31 oct 12 6 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical s - parameter results (on wafer measurements) tamb.= +25c, v+ = +5v, v - = - 5v phase shifter performances: phase error peak phase error versus frequency (all phase states) peak phase error versus state 2.7ghz < frequency < 3.4ghz rms phase error versus frequency for 15 chips phase shift versus state 2.7ghz < frequency < 3.4ghz peak phase error ( deg ) state (0 to 63) peak phase error ( deg ) rms_ppe (deg) state (0 to 63) phase shift (deg) 0 50 100 150 200 250 300 350 0 5 10 15 20 25 30 35 40 45 50 55 60 65
s - band 6 - bit phase shifter chp1102 - 98f ref. : dschp11022305 - 31 oct 12 7 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical s - parameter results (on wafer measurements) tamb.= +25c, v+ = +5v, v - = - 5v phase shifter performances: amplitude variation amplitude variation versus frequency (all states) amplitude variation versus state 2.7ghz < frequency < 3.4ghz amplitude variation (db) state (0 to 63) amplitude variation (db)
chp1102 - 98f s - band 6 - bit phase shifter ref. : dschp11022305 - 31 oct 12 8 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical dimensions and pad allocation chip thickness: 100m +/ - 10m rf pads (1, 5): 122 x 10 0m 2 dc and control pads (2, 3, 4, 6, 7, 8, 9, 10, 11, 12, 13): 100 x 100m 2 pin number pad name description voltage value 1 in input rf 2, 4, 13 nc 3 v - dc negative supply - 5v 5 out output rf 6 v+ dc positive supply +5v 7 a6 phase shifter bi t 6 0v / 3.3v or 0v / 5v 8 a5 phase shifter bit 5 0v / 3.3v or 0v / 5v 9 a4 phase shifter bit 4 0v / 3.3v or 0v / 5v 10 a3 phase shifter bit 3 0v / 3.3v or 0v / 5v 11 a2 phase shifter bit 2 0v / 3.3v or 0v / 5v 12 a1 phase shifter bit 1 0v / 3.3 v or 0v / 5v 1 2 3 4 5 6 7 8 9 10 11 12 13
s - band 6 - bit phase shifter chp1102 - 98f ref. : dschp11022305 - 31 oct 12 9 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 bonding recommendations port connection in (1) out (5) inductance (lbonding) = 0.3nh one wire: diameter 25m, length 0.4mm dc and interface pads inductance (lbonding) = 0.8nh one wire: diameter 25m, length 1.0mm recommended a ssembly diagram circuit schematic amp1 phase shifter in out amp2 v - a1 a6 v+ - v 10nf in out +v 120pf
chp1102 - 98f s - band 6 - bit phase shifter ref. : dschp11022305 - 31 oct 12 10 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recomm endations for the ums package products. ordering information chip form: chp1102 - 98f information furnished is believed to be accurate and reliable. however united monoli thic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semi conductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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